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april 2006 rev 3 1/13 13 STL60NH3LL n-channel 30v - 0.0065 ? - 30a - powerflat? (6x5) ultra low gate charge stripfet? power mosfet general features improved die-to-footprint ratio very low profile package (1mm max) very low thermal resistance very low gate charge low threshold device description this application specific power mosfet is the latest generation of stmicroelectronics unique ?stripfet?? technology. the resulting transistor is optimized for low on-resistance and minimal gate charge. the chip-scaled powerflat? package allows a significant board space saving, still boosting the performance. applications switching application internal schematic diagram type v dss r ds(on) i d STL60NH3LL 30v <0.0085 ? 16a (2) powerflat?(6x5) www.st.com order codes part number marking package packaging STL60NH3LL l60nh3ll powerflat? (6 x 5) tape & reel
contents STL60NH3LL 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STL60NH3LL electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 16 v i d (1) 1. the value is rated according r thj-c and is limited by wire bonding. drain current (continuous) at t c = 25c 30 a i d (1) drain current (continuous) at t c = 100c 30 a i d (2) 2. this value is according r thj-pcb drain current (continuous) at t c = 25c 16 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 64 a p tot (1) total dissipation at t c = 25c 60 w p tot (2) total dissipation at t c = 25c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case (drain) max 2.08 c/w rthj-pcb (1) 1. when mounted on fr-4 board of 1inch 2 , 2 oz cu, t<10sec thermal resistance junction-pcb max 31.3 c/w
electrical characteristics STL60NH3LL 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test condictions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,@125c 1 10 a a i gss gate body leakage current (v ds = 0) v ds = 16v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 v r ds(on) static drain-source on resistance v gs = 10v, i d = 8a v gs = 4.5v, i d = 8a 0.0065 0.0075 0.0085 0.0105 ? ? table 4. dynamic symbol parameter test condictions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f = 1mhz, v gs =0 1810 565 41 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15v, i d = 16a, v gs = 4.5v (see figure 15) 18 4.8 5.3 24 nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 0.5 1.5 3 ?
STL60NH3LL electrical characteristics 5/13 table 5. switching times symbol parameter test condictions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15v, i d = 8a r g = 4.7 ? , v gs = 10v, (see figure 14) 8 65 ns ns t d(off) t f turn-off delay time fall time v dd = 15v, i d = 8a r g = 4.7 ? , v gs = 10v, (see figure 14) 30 20 ns ns table 6. source drain diode symbol parameter test condictions min typ. max unit i sd i sdm source-drain current source-drain current (pulsed) 16 64 a a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 16a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16v, di/dt = 100a/s v dd = 20v, t j = 25c (see figure 16) 22 32 1.9 ns nc a
electrical characteristics STL60NH3LL 6/13 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. normalized b vdss vs temperature figure 6. static drain-source on resistance
STL60NH3LL electrical characteristics 7/13 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
electrical characteristics STL60NH3LL 8/13 the previous curve gives the single pulse safe operating area for unclamped inductive loads under the following conditions: p d(ave) =0.5*(1.3*bv dss *i av ) e as(ar) =p d(ave) *t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche figure 12. allowable iav vs time in avalanche figure 13. allowable iav vs time in avalanche
STL60NH3LL test circuit 9/13 3 test circuit figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform
package mechanical data STL60NH3LL 10/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STL60NH3LL package mechanical data 11/13 dim. mm. inch min. typ max. min. typ. max. a 0.80 0.83 0.93 0.031 0.032 0.036 a1 0.02 0.05 0.0007 0.0019 a3 0.20 0.007 b 0.35 0.40 0.47 0.013 0.015 0.018 d 5.00 0.196 d1 4.75 0.187 d2 4.15 4.20 4.25 0.163 0.165 0.167 e 6.00 0.236 e1 5.75 0.226 e2 3.43 3.48 3.53 0.135 0.137 0.139 e4 2.58 2.63 2.68 0.103 0.105 e 1.27 0.050 l 0.70 0.80 0.90 0.027 0.031 0.035 powerflat? (6x5) mechanical data
revision history STL60NH3LL 12/13 5 revision history table 7. revision history date revision changes 21-jul-2004 1 first release 05-oct-2004 2 values changed 12-apr-2006 3 new template
STL60NH3LL 13/13 please read carefully: i nformation in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st? ) reserve th e r ight to make changes, corrections, modifications or improvements, to this document, and the products and services described her ein at an y t ime, without notice. a ll st products are sold pursuant to st?s terms and conditions of sale. p urchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st ass umes n o l iability whatsoever relating to the choice, selection or use of the st products and services described herein. n o license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. if any part of th is d ocument refers to any third party products or services it shall not be deemed a license grant by st for the use of such third p arty produc ts o r services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoeve r of suc h t hird party products or services or any intellectual property contained therein. u nless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implie d w arranty with respect to the use and/or sale of st products including without limitation implie d w arranties of merchantability, fitness for a particular purpose (and their equivalents under the law s o f any jurisdiction), or infringement of any patent, copyright or other intellectual property right. u nless expressly approved in writing by an authorize representative of st, st products are not designe d, a uthorized or warranted for use in military, air craft, space, life saving, or life sustaining application s, n or in products or systems, where failure or malfunction may result in personal injury, death, o r s evere property or environmental damage. r esale of st products with provisions different from the statements and/or technical features set forth in this document shall i mmediately vo id a ny warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoeve r, an y l iability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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